Low resistance GaN/InGaN/GaN tunnel junctions
نویسندگان
چکیده
منابع مشابه
Low-frequency magnetic and resistance noise in magnetic tunnel junctions
We have studied the voltage fluctuations of current-biased, micron-scale magnetic tunnel junctions. We find that the spectral power density is 1/f -like at low frequencies and becomes frequency independent at high frequencies. The frequency-independent background noise is due to Johnson-Nyquist noise and shot noise mechanisms. The nature of the 1/f noise has its origin in two different mechanis...
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We have observed low-frequency noise due to quasiequilibrium thermal magnetization fluctuations in micron-scale magnetic tunnel junctions (MTJs). This strongly field-dependent magnetic noise occurs within the magnetic hysteresis loops, either as 1/f or Lorentzian (random telegraph) noise. We attribute it to the thermally excited hopping of magnetic domain walls between pinning sites. Our result...
متن کاملMagnetic Tunnel Junctions
Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2013
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4796041